Title: Fabrication of p-n Junction Diode Using Device Fabrication Technology


Volume 7 Issue 2 Year 2017

Authors:

Pooja Choudhary

poojachoudhary87@gmail.com
Department of Electronics & Communication Engineering, Swami Keshvanand Institute of Technology, Management and Gramothan, Jaipur-302017 (INDIA),

Manju Choudhary

ijskit@skit.ac.in
Department of Electronics & Communication Engineering, Swami Keshvanand Institute of Technology, Management and Gramothan, Jaipur-302017 (INDIA)

Pages: 25-28


Abstract:

Diode is the basic semiconductor device which is simply combination of p-n junction. Here p and n junction is positive and negative junction. The p-n junctions are elementary part in the performance of functions such as rectification and switching in circuits. . In this paper, working condition as well as IC fabrication steps are described to fabricate the diodes on silicon wafer. The technology of junction fabrication includes the accumulated knowledge and research for making junctions and forming contact to them in mountings suitable for electronics devices like diode, transistor, FET. Fabrication process  depends on materials,  processes and methods used to develop highly functional device. Fabrication of IC is a multistep sequential process like cleaning of
wafer, oxidation, etching, diffusion, photolithography and metallization. In this paper, 12,500 diodes are fabricated on 1 inch silicon wafer with resistivity 0.9-1.3 ohm.

Keywords:
VLSI, IC Fabrication, Wafer, Silicon