Al-Se-Cu thin film was prepared on a glass substrate by thermal evaporation at a pressure of 10-5 torr using vacuum coating unit. Three layers of different material were deposited on Glass substrate. I layer is Aluminum,II Layer is Selenium and III layer is Cu. Thickness of film is about ~200 nm. We propose to study the V- I Characteristics of this film, the effect described without any external voltage being applied to the actual PN junction resulting in the junction being in a state of equilibrium. However, if we have to make electrical connections at the ends of both the N-type and the P-type materials and then connect them to a battery source, an additional energy source now exists to overcome the potential barrier. Al-Se-Cu film resulting diode's forward current is found to be controlled by majority carrier tunnelling and negative differential resistance starts appearing which results maximum transition of electrons and results in decrease in current up to valley point (4-5 V)of I-V curve and negative differential resistance observed is - 0.64 x 107 ohms. This represents RTD (Resonant tunnelling diode) Structure.
Thermal evaporation, Negative differential resistance, Resonant tunnelling diode