Tellurium (Te) thin films of various thickness (200nm,275nm, 350nm & 500nm) were prepared on Silicon (Si) substrate by thermal evaporation method under the vacuum of about 10-5 torr using vacuum coating unit. It is observed that the
resistivity decreases exponentially with the Increasing Temperature. A direct band gap between 0.368 eV to 0.395 eV is obtained at different temperatures with Four Probe Method which shows that when we increase the thickness of material the
band gap will decreases. It is also observed that voltage decreases with the increasing the temperature using four probe method. Samples were studied by X-ray diffraction (XRD), and atomic force microscopy (AFM) to obtain comprehensive and consistent micro structural information.
Thermal evaporation, Vacuum coating unit, Four Probe Method