Title: Electrical, Structural Properties of Tellurium Thin Films on Silicon Substrate


Volume 6 Issue 1 Year 2016

Authors:

Vivek Jaimini

ijskit@skit.ac.in
Department of Electronics & Communication Engineering, Swami Keshvanand Institute of Technology Management & Gramothan, Jaipur-302017 (INDIA),

Swati Arora

aroraswati14@gmail.com
Department of Electronics & Communication Engineering, Swami Keshvanand Institute of Technology Management & Gramothan, Jaipur-302017 (INDIA),

Subodh Srivastava

subodhphy@gmail.com
Department of Physics, Vivekanand Global University, Jaipur (INDIA),

Y. K. Vijay

vijayyk@gmail.com
Department of Physics, Vivekanand Global University, Jaipur (INDIA)

Pages: 38-43


Abstract:

Tellurium (Te) thin films of various thickness (200nm,275nm, 350nm & 500nm) were prepared on Silicon (Si) substrate by thermal evaporation method under the vacuum of about 10-5 torr using vacuum coating unit. It is observed that the
resistivity decreases exponentially with the Increasing  Temperature. A direct band gap between 0.368 eV to 0.395 eV is obtained at different temperatures with Four Probe Method which shows that when we increase the thickness of material the
band gap will decreases. It is also observed that voltage decreases with the increasing the temperature using four probe method. Samples were studied by X-ray diffraction (XRD), and atomic force microscopy (AFM) to obtain comprehensive and consistent micro structural information.

Keywords:
Thermal evaporation, Vacuum coating unit, Four Probe Method