The current work deals with the designing and performance analysis of a Triple Material Double Gate Cylindrical Gate All Around (TMDG-CGAA) MOSFET in the nanometer regime. The proposed structure has combined the gate engineering technique by used a double gate structure and the material engineering techniques by used three different materials in the gate electrode to incorporate the benefits of both the techniques. The proposed structure has been verified by using the ATLAS tool, which is a 3-dimensional tool. A comparative study of SG-CGAA, DG-CGAA, DMDG-CGAA, and TMDG-CGAA has been accomplished by using the same device parameters. The threshold voltage (Vth) is extracted from the transfer characteristic of the above MOSFETs. Along with the threshold voltage extraction the other parameters like DIBL and Ion/Ioff ratio are also calculated. Results disclosed that the TMDG-CGAA MOSFET gives better immunity to the SCEs like DIBL. Also, the ratio of on current is to off current is also high in the TMDG-CGAA MOSFET in comparison to SG CGAA MOSFET and DGDM-CGAA MOSFET structures. In the short channel planar devices, the potential barrier is reducing so that the threshold voltage is also reducing. But in the proposed structure the device shows better performance, it increases gate controllability and reducing the SCEs and increment in the high drain current along with the high packaging density, which is needed in the application of Ultra Large Scale Integration (ULSI).