Title: Effect of SiO2 Thickness Variation on Threshold Voltage and Trans-Conductance of TFT


Authors:

Abhinandan Jain

abbhinandan.jain@skit.ac.in
Department of Electronics and Communication Engineering, Swami Keshvanand Institute of Technology, Management & Gramothan, Jaipur, Rajasthan (INDIA),

Lalit Kumar Lata

lalit.lata2008@gmail.com
Department of Electronics and Communication Engineering, Swami Keshvanand Institute of Technology, Management & Gramothan, Jaipur, Rajasthan (INDIA),

Praveen Kumar Jain

praveenjain.spsl@gmail.com
Department of Electronics and Communication Engineering, Swami Keshvanand Institute of Technology, Management & Gramothan, Jaipur, Rajasthan (INDIA),

Archana Jain

archana@gmail.com
Department of Electronics and Communication Engineering, Swami Keshvanand Institute of Technology, Management & Gramothan, Jaipur, Rajasthan (INDIA)

Pages: 37-39

DOI:

Abstract:

Keywords:
Threshold voltage, Transconductance, Channel length