Title: Investigation of Properties of Se(1-x)Sbx Heterostructure


Volume 9 Issue 1 Year 2019

Authors:

Hemlata Panwar

ijskit@skit.ac.in
Department of Electronics & Communication Engineering, Swami Keshvanand Institute of Technology, Management and Gramothan, Jaipur-302017 (INDIA),

Swati Arora

aroraswati14@gmail.com
Department of Electronics & Communication Engineering, Swami Keshvanand Institute of Technology, Management and Gramothan, Jaipur-302017 (INDIA)

Pages: 53-56


Abstract:

Se(1-x)Sbx Heterostructure of 200nm Nano Crystalline Thin Films with different stoichiometry ratio (x = 0.25 ,0.50 , 0.80) of Se:Sb have been deposited on glass substrate by thermal evaporation method under the vacuum of about 10 -5 torr using vacuum coating unit under the deposition rate of 10 Å /sec. Nano Crystalline thin films were kept at without annealed, annealed at 150oC and 200oC (for 1 hr) to examine the effect of annealing in recrystallization. It was observed that optical band gap decreases exponentially with increases the photon energy. It is observed that absorption coefficient in optical band gap decreases exponentially with increasing Sb content. UV- VIS NIR Spectrometer is used to measure optical properties of thin films. X-ray
diffraction and scanning electron microscopy used to obtain comprehensive and consistent micro structural information.

Keywords:
Optical Band Gap, Vacuum coating unit, UV-Vis-NIR Spectrometer