Abstract:
In this paper effect of scaling on a TMDG strained channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is analyzed. To observe the scaling effects we have designed MOSFETs with varying channel lengths i.e. in the ratio of 2:3:4. In our previous paper we have designed a Triple Material Double Gate (TMDG) strained channel MOSFET to improve performance of nano scaled transistors. Here, we have analyzed the effect of reduction in channel length of the TMDG strained channel MOSFET. For this we have designed MOSFETs of 60nm, 45nm and 30nm channel lengths, and electrical characteristics like threshold voltage and trans-conductance (g m ) are also calculated for these transistors. Short channel effect parameter DIBL is calculated for the MOSFETs using Constant Current (CC) method, which shows increased SCEs in smaller channel length transistors. Comparative analysis of surface potential profiles of these transistors shows reduced threshold voltage (V th ) in scaled MOSFETs.
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