Title: Effect of Scaling on Device Characteristics of Triple Material Double Gate (TMDG) Strained Channel NMOS


Volume 9 Issue 1 Year 2019

Authors:

Jyotsana Sharma

ijskit@skit.ac.in
Department of Electronics & Communication Engineering, Swami Keshvanand Institute of Technology, Management and Gramothan, Jaipur-302017 (INDIA),

Rahul Pandey

rahul.pandey@skit.ac.in
Department of Electronics & Communication Engineering, Swami Keshvanand Institute of Technology, Management and Gramothan, Jaipur-302017 (INDIA)

Pages: 57-61


Abstract:

In this paper effect of scaling on a TMDG strained channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is analyzed. To observe the scaling effects we have designed MOSFETs with varying channel lengths i.e. in the ratio of 2:3:4. In our previous paper we have designed a Triple Material Double Gate (TMDG) strained channel MOSFET to improve performance of nano scaled transistors. Here, we have analyzed the effect of reduction in channel length of the TMDG strained channel MOSFET. For this we have designed MOSFETs of 60nm, 45nm and 30nm channel lengths, and electrical characteristics like threshold voltage and trans-conductance (g m ) are also calculated for these transistors. Short channel effect parameter DIBL is calculated for the MOSFETs using Constant Current (CC) method, which shows increased SCEs in smaller channel length transistors. Comparative analysis of surface potential profiles of these transistors shows reduced threshold voltage (V th ) in scaled MOSFETs.

Keywords:
TMDG MOSET, Strained-Si Channel, Drain Induced Barrier Lowering (DIBL), Short Channel Effects (SCEs), Surface Potential Profile, Trans- conductance (gm )