Title: ZnOxMgO1-x (x=1.0, 0.70, 0.60, 0.20, 0.10) Nanostructures Thin Films


Authors:

Swati Arora

swati@skit.ac.in
Department of Electronics and Communication Engineering, Swami Keshvanand Institute of Technology, Management & Gramothan, Jaipur, India,

Ankita Sharma

anki.1988@yahoo.com
Department of Electronics and Communication Engineering, Swami Keshvanand Institute of Technology, Management & Gramothan, Jaipur, India

Pages: 31-34

DOI:

Abstract:

In this study it has been reported that composites of ZnOxMgO1-x were formed resting on ITO substrates with electron beam evaporation. Different MgO compositions, from zero to ninety percent doped, are expressed as atomic percentage success in doping MgO, as determined by XRD. It has been shown via research that the construction of a mesoporous structure is intimately associated to the tuning of the band gap as of 3.16 eV to 3.55 eV and the subsequent shifting of the transmission band edge by around 36 meV in the direction of higher energy. By analyzing UV-Vis Spectra, the Band Gap could be determined. Surface flaws have been shown to increase with MgO content, as confirmed by the investigation. Both undoped and doped Zn1-xMgOx  thin films be deposit using an ultrasonic spray pyrolysis method over the substrate. Substitution of MgO ions for ZnO ions in the ZnO lattice is shown by a blue shift during the near-band-edge production and a transform in the lattice constant. Because of the structural transition from wurtzite (ZnO) to a combination of wurtzite and cubic (MgO) phases with greater Mg concentration (x C 0.21), a striking morphological transformation is seen. The FTIR analysis showed that the typical absorption peaks for Zn-O stretching mode were located at *442 cm-1 and moved into the red area when the Mg level increased. One extra band about 523 cm-1 was detected, most likely due to the Mg-related vibration mode in ZnO, in addition of the host phonons.

Keywords:
Lattice parameters, E-Beam Deposition, transmission band edge, Mesoporous, Defect